Night Vision Goggles Monocular
HAWKEEP HKP-2041 / HKP-2041-50° NIGHT VISION GOGGLES MONOCULAR Products Description HAWKEEP military single-soldier low-light night vision device. Can be used handheld or head mounted. Uses Gen2+ image enhancement tube to ensure image clarity. Optional 50° lens. Uses advanced optical system...
Description
HAWKEEP HKP-2041 / HKP-2041-50° NIGHT VISION GOGGLES MONOCULAR
Products Description
HAWKEEP military single-soldier low-light night vision device. Can be used handheld or head mounted. Uses Gen2+ image enhancement tube to ensure image clarity. Optional 50° lens. Uses advanced optical system with high resolution.
This night vision is the standard-issue night vision optic and used by people throughout the world. These units are of the highest quality in optics, design and functionality. The night vision can be mounted on a helmet for hands-free use, or simply as a handheld device. The night vision provides night vision aid to one of the operator's eyes, leaving the other to retain its natural night vision. This is important at night in the field. Allowing the user to go back and forth between aided and unaided vision. Operators need the ability to instantly switch between dynamic light conditions as the situation develops. The night vision can be assembled with various levels of Image Intensifier tubes. The night vision can be outfitted with high-performance Gen 2 and Gen 3 image intensifier tubes in green or white phosphor. Additional features include IR on and low battery indicators, automatic brightness control and auto-shut off function that shuts down the device within seconds when accidentally exposed to bright light, and an integrated IR illuminator for use in extremely low light conditions. When you are looking for the pinnacle of night vision this night vision.
HKP-2041

HKP-2041-50°

Features
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The night vision can be outfitted with high-performance Gen 2 and Gen 3 image intensifier tubes in green or white phosphor. |
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Battery Cover - Spring-Built-in Design |
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IR Indicator in FOV;Low Battery Indicator in FOV |
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IP65 waterproof and dustproof level (upgradeable to IP67) |
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Multilayer wideband lens coating |
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Automatic brightness control |
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Bright light cut-off |
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Built-in Infrared illuminator |
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Helmet Flip Up On/Off |
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Support detachable remote infrared light |
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Support replacing high-magnification lenses (4X/6X/8X) for distant viewing. |
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Supports both 1X CR123A lithium battery |
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Support connecting to mobile phones/digital cameras/SLR cameras for photo and video recording. |
Technical Parameters
| Brand | Hawkeep | |||
| Model | HKP-2041 | HKP-3041 | HKP-2041-50° | HKP-3041-50° |
| Generation(IIT) | Gen2+ | Gen3 | Gen2+ | Gen3 |
| Resolution(lp/mm) | 60-64 | 64-72 | 60-64 | 64-72 |
| Figure Of Merit(FOM) | 1400-1800 | 1600-2300 | 1400-1800 | 1600-2300 |
| Sensitivity(µ A/lm) | 700-1000 | 850-1200 | 700-1000 | 850-1200 |
| SNR | 23-28 | 28-32 | 23-28 | 28-32 |
| Luminance Gain(cd/㎡/lx) | 8000-12000 | 10000-20000 | 8000-12000 | 10000-20000 |
| Photocathode Type | S25 | GaAs | S25 | GaAs |
| Magnification(X) | 1 | |||
| FOV (deg,°) | 40 | 50 | ||
| Focal Length | 25 | 22.5 | ||
| Diopter Adjustment(deg,°) | -1 | |||
| Parallelism of Optical Axis | <0.1 ° /0.5 | |||
| MTF | 120lp/mm | |||
| Optical Distortion | <0.5% Max / 3% Max | |||
| Relative Illumination | >75% | |||
| Range of Focus (m) | 0.25m to infinity | |||
| Dimensions(mm) | 110 × 68 × 42 | 103 × 68 × 50 | ||
| Weight(kg) | 0.3 | 0.28 | ||
| Switch Style | Rotary switch | |||
| Switch Position | OFF / ON / IR | |||
| Power Supply (v) | 2.6-4.2 | |||
| Battery Type (v) | 1 × CR123A lithium battery | |||
| Battery Life(h) | 60 h – 100 h | |||
| Low Battery Indicator | Yes | |||
| Overall Power Consumption | <0. 1W | |||
| Bright Light Cut-off | Yes | |||
| Automatic Brightness Control | Yes | |||
| Multilayer Wideband Lens Coating | Yes | |||
| Flip-Up On-Off | Yes | |||
| Infrared Illuminator | Built-in | |||
| IR Indicator | Yes | |||
| IR Wavelength(nm) | 850 | |||
| Support detachable remote infrared light | Yes | |||
| Support replacing high-magnification lenses | Yes | |||
| Support connecting to mobile phones/digital cameras/SLR cameras | Yes | |||
| Battery Cover - Spring-Built-in Design | Yes | |||
| Rapid switching between left and right eyes | Yes | |||
| Assemble a binocular night vision device | Yes | |||
| Operating Temperature (°C ) | -51 to +49 | |||
| Storage Temperature(°C ) | -51 to +85 | |||
| Relative Humidity | 5%-98% | |||
| MTTF (h) | 10000 | |||
| Environmental Rating | IP65/ IP67 | |||
| Guarantee(yr) | 1 | |||
product display
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Standard Accessories
Night Vision
Lens Cover
Soft Carrying Case
Instruction Manual
Lens Tissue
Paper Packing Box
Desiccant
Certificate of Conformity
One Lithium Battery (CR123)
Additional supplement
Semiconductor electrode refers to the electrode system composed of semiconductor materials and appropriate electrolytes. When the semiconductor is in contact with the electrolyte, its residual charge is distributed in the electrode surface layer, forming a space charge layer similar to the ion double layer in the solution. The holes and electrons generated by the semiconductor electrode excited by light have strong oxidizing and reducing properties respectively, and can undergo redox reactions with the electrolyte solution. At the same time, the holes and electrons are separated in the space charge region, generating an electromotive force, forming a loop with the counter electrode, and forming a photoelectrochemical cell.
There are many differences between semiconductor electrodes and conductor electrodes, which determine a series of characteristics of semiconductor electrode reactions or the characteristics of the kinetic process of charged particles migrating at the semiconductor/solution interface. These differences are mainly manifested in:
① The concentration of carriers in semiconductors is much lower than that in metals, and it is easy to change the concentration. The electron concentration in the metal conductor body is 1028/m3, and the residual charge on the electrode surface is on the order of 1018~1019/m3, which is much less than that in the body, while the free electron concentration in semiconductors is about 1021/m3. When there is residual charge on the electrode, for metals, this part of the residual charge is all concentrated on the electrode surface, but the residual charge of semiconductors is dispersed in the space charge layer.
② Due to the above characteristics, a large part of the potential difference between the semiconductor and the solution interface will fall on the space charge layer, and the potential of the compact layer in the solution accounts for a very small proportion of the entire potential difference in the interface area), and it causes the energy band close to the electrode surface to bend.
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