Night Vision Goggles Monocular
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Night Vision Goggles Monocular

Night Vision Goggles Monocular

HAWKEEP HKP-2041 / HKP-2041-50° NIGHT VISION GOGGLES MONOCULAR Products Description HAWKEEP military single-soldier low-light night vision device. Can be used handheld or head mounted. Uses Gen2+ image enhancement tube to ensure image clarity. Optional 50° lens. Uses advanced optical system...

Description

HAWKEEP HKP-2041 / HKP-2041-50° NIGHT VISION GOGGLES MONOCULAR 

 

Products Description

 

HAWKEEP military single-soldier low-light night vision device. Can be used handheld or head mounted. Uses Gen2+ image enhancement tube to ensure image clarity. Optional 50° lens. Uses advanced optical system with high resolution.

 

This night vision is the standard-issue night vision optic and used by people throughout the world. These units are of the highest quality in optics, design and functionality. The night vision can be mounted on a helmet for hands-free use, or simply as a handheld device. The night vision provides night vision aid to one of the operator's eyes, leaving the other to retain its natural night vision. This is important at night in the field. Allowing the user to go back and forth between aided and unaided vision. Operators need the ability to instantly switch between dynamic light conditions as the situation develops. The night vision can be assembled with various levels of Image Intensifier tubes. The night vision can be outfitted with high-performance Gen 2 and Gen 3 image intensifier tubes in green or white phosphor. Additional features include IR on and low battery indicators, automatic brightness control and auto-shut off function that shuts down the device within seconds when accidentally exposed to bright light, and an integrated IR illuminator for use in extremely low light conditions. When you are looking for the pinnacle of night vision this night vision.

 

 

HKP-2041 

 

night vision

 

HKP-2041-50°

night vision

 

Features

 

The night vision can be outfitted with high-performance Gen 2 and Gen 3 image intensifier tubes in green or white phosphor.

Battery Cover - Spring-Built-in Design

IR Indicator in FOV;Low Battery Indicator in FOV

IP65 waterproof and dustproof level (upgradeable to IP67)

Multilayer wideband lens coating

Automatic brightness control

Bright light cut-off

Built-in Infrared illuminator

Helmet Flip Up On/Off

Support detachable remote infrared light

Support replacing high-magnification lenses (4X/6X/8X) for distant viewing.

Supports both 1X CR123A lithium battery

Support connecting to mobile phones/digital cameras/SLR cameras for photo and video recording.

 

Technical Parameters

 

Brand Hawkeep
Model HKP-2041 HKP-3041 HKP-2041-50° HKP-3041-50°
Generation(IIT) Gen2+ Gen3 Gen2+ Gen3
Resolution(lp/mm) 60-64 64-72 60-64 64-72
Figure Of Merit(FOM) 1400-1800 1600-2300 1400-1800 1600-2300
Sensitivity(µ A/lm) 700-1000 850-1200 700-1000 850-1200
SNR 23-28 28-32 23-28 28-32
Luminance Gain(cd/㎡/lx) 8000-12000 10000-20000 8000-12000 10000-20000
Photocathode Type S25 GaAs S25 GaAs
Magnification(X) 1
FOV (deg,°) 40 50
Focal Length 25 22.5
Diopter Adjustment(deg,°) -1
Parallelism of Optical Axis <0.1 ° /0.5
MTF 120lp/mm
Optical Distortion <0.5% Max / 3% Max
Relative Illumination >75%
Range of Focus (m) 0.25m to infinity
Dimensions(mm) 110 × 68 × 42 103 × 68 × 50
Weight(kg) 0.3 0.28
Switch Style Rotary switch
Switch Position OFF / ON / IR
Power Supply (v) 2.6-4.2
Battery Type (v) 1 × CR123A lithium battery
Battery Life(h) 60 h – 100 h
Low Battery Indicator Yes
Overall Power Consumption <0. 1W
Bright Light Cut-off Yes
Automatic Brightness Control Yes
Multilayer Wideband Lens Coating Yes
Flip-Up On-Off Yes
Infrared Illuminator Built-in
IR Indicator Yes
IR Wavelength(nm) 850
Support detachable remote infrared light Yes
Support replacing high-magnification lenses Yes
Support connecting to mobile phones/digital cameras/SLR cameras Yes
Battery Cover - Spring-Built-in Design Yes
Rapid switching between left and right eyes Yes
Assemble a binocular night vision device Yes
Operating Temperature (°C ) -51 to +49
Storage Temperature(°C ) -51 to +85
Relative Humidity 5%-98%
MTTF (h) 10000
Environmental Rating IP65/ IP67
Guarantee(yr) 1

 

product display

 

 

night vision goggles night vision goggles
night vision goggles night vision goggles

 

Standard Accessories

 

Night Vision

 

Lens Cover

 

Soft Carrying Case

 

Instruction Manual

 

Lens Tissue

 

Paper Packing Box

 

Desiccant

 

Certificate of Conformity

 

One Lithium Battery (CR123)

 

Additional supplement

 

Semiconductor electrode refers to the electrode system composed of semiconductor materials and appropriate electrolytes. When the semiconductor is in contact with the electrolyte, its residual charge is distributed in the electrode surface layer, forming a space charge layer similar to the ion double layer in the solution. The holes and electrons generated by the semiconductor electrode excited by light have strong oxidizing and reducing properties respectively, and can undergo redox reactions with the electrolyte solution. At the same time, the holes and electrons are separated in the space charge region, generating an electromotive force, forming a loop with the counter electrode, and forming a photoelectrochemical cell.

 

There are many differences between semiconductor electrodes and conductor electrodes, which determine a series of characteristics of semiconductor electrode reactions or the characteristics of the kinetic process of charged particles migrating at the semiconductor/solution interface. These differences are mainly manifested in:

 

① The concentration of carriers in semiconductors is much lower than that in metals, and it is easy to change the concentration. The electron concentration in the metal conductor body is 1028/m3, and the residual charge on the electrode surface is on the order of 1018~1019/m3, which is much less than that in the body, while the free electron concentration in semiconductors is about 1021/m3. When there is residual charge on the electrode, for metals, this part of the residual charge is all concentrated on the electrode surface, but the residual charge of semiconductors is dispersed in the space charge layer.

 

② Due to the above characteristics, a large part of the potential difference between the semiconductor and the solution interface will fall on the space charge layer, and the potential of the compact layer in the solution accounts for a very small proportion of the entire potential difference in the interface area), and it causes the energy band close to the electrode surface to bend.

 

 

 

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